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SI3812DV vishay siliconix document number: 71069 s-03510?rev. d, 16-apr-01 www.vishay.com 1 n-channel 20-v (d-s) mosfet with schottky diode
v ds (v) r ds(on) ( ) i d (a) 0.125 @ v gs = 4.5 v 2.4 20 0.200 @ v gs = 2.5 v 1.8
v ka (v) v f (v) diode forward voltage i f (a) 20 0.48 v @ 0.5 a 0.5 k a tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm d g n/c s k a d g s n-channel mosfet
parameter symbol 5 sec steady state unit drain-source voltage (mosfet) v ds 20 reverse voltage (schottky) v ka 20 v gate-source voltage (mosfet) v gs 12 12 v a t a = 25 c 2.4 2.0 continuous drain current (t j = 150 c) (mosfet) a t a = 85 c i d 1.7 1.4 pulsed drain current (mosfet) i dm 8 continuous source current (mosfet diode conduction) a i s 1.05 0.75 a average foward current (schottky) i f 0.5 0.5 pulsed foward current (schottky) i fm 8 8 t a = 25 c 1.15 0.83 maximum power dissipation (mosfet) a t a = 85 c 0.59 0.53 t a = 25 c p d 1.0 0.76 w maximum power dissipation (schottky) a t a = 85 c 0.52 0.48 operating junction and storage temperature range t j , t stg ?55 to 150 c notes a. surface mounted on 1? x 1? fr4 board.
SI3812DV vishay siliconix www.vishay.com 2 document number: 71069 s-03510 ? rev. d, 16-apr-01 parameter device symbol typical maximum unit mosfet 93 110 junction-to-ambient a t 5 sec schottky 103 125 mosfet r thja 130 150 junction-to-ambient a steady state schottky 140 165 c/w mosfet 75 90 junction-to-foot (mosfet drain, schottky kathode) steady state schottky r thjf 80 95 notes a. surface mounted on 1 ? x1 ? fr4 board.
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 zero gate voltage drain current (mosfet + schottky) i dss v ds = 16 v, v gs = 0 v, t j = 85 c 10 a on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 5 a v gs = 4.5 v, i d = 2.4 a 0.100 0.125 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 1.0 a 0.160 0.200 forward transconductance a g fs v ds = 5 v, i d = 2.4 a 5 s schottky diode forward voltage a v sd i s = 1.5 a, v gs = 0 v 0.79 1.1 v dynamic b total gate charge q g 2.1 4.0 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 2.4 a 0.3 nc gate-drain charge q gd 0.4 turn-on delay time t d(on) 10 17 rise time t r v dd = 10 v, r l = 10 30 50 turn-off delay time t d(off) v dd = 10 v, r l = 10 i d 1 a, v gen = 4.5 v, r g = 6 14 25 ns fall time t f 6 12 source-drain reverse recovery time t rr i f = 3.0 a, di/dt = 100 a/ s 30 50 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
parameter symbol test condition min typ max unit i f = 0.5 0.42 0.48 forward voltage drop v f i f = 0.5, t j = 125 c 0.33 0.4 v v r = 20 0.002 0.100 maximum reverse leakage current i rm v r = 20, t j = 75 c 0.06 1 ma rm v r = 20, t j = 125 c 1.5 10 junction capacitance c t v r = 10 v 31 pf
SI3812DV vishay siliconix document number: 71069 s-03510 ? rev. d, 16-apr-01 www.vishay.com 3
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.1 0.2 0.3 0.4 0.5 01234567 0 2 4 6 8 10 012345 0.0 0.9 1.8 2.7 3.6 4.5 0.0 0.5 1.0 1.5 2.0 2.5 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 0 50 100 150 200 250 300 048121620 v gs = 4.5 thru 3.5 v 25 c t c = ? 55 c c rss c oss c iss v ds = 10 v i d = 2.4 a v gs = 4.5 v i d = 2.4 a v gs = 4.5 v v gs = 2.5 v 1.5 v 125 c output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 2.5 v 3 v 2 v
SI3812DV vishay siliconix www.vishay.com 4 document number: 71069 s-03510 ? rev. d, 16-apr-01
normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 130 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.01 0 1 6 8 2 4 10 30 0.1 power (w) single pulse power, junction-to-ambient time (sec) 0.00 0.08 0.16 0.24 0.32 0.40 012345 v gs ? gate-to-source voltage (v) on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) i d = 2.4 a i d = 1 a 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 t j = 25 c t j = 150 c source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c)
SI3812DV vishay siliconix document number: 71069 s-03510 ? rev. d, 16-apr-01 www.vishay.com 5
10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
? junction capacitance (pf) 0.8 1.0 0.1 1 5 forward voltage drop v f ? forward voltage drop (v) ? forward current (a) i f 0 0.2 0.4 t j = 150 c capacitance 0 30 60 90 120 150 048121620 v ka ? reverse voltage (v 125 150 0.0001 1 20 reverse current vs. junction temperature t j ? junction temperature ( c) ? reverse current (ma) i r 0 255075100 c t 10 v 0.001 0.01 0.1 10 20 v 0.6 t j = 25 c
SI3812DV vishay siliconix www.vishay.com 6 document number: 71069 s-03510 ? rev. d, 16-apr-01
normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 140 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance

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